Published: Sun, February 03, 2019
Electronics | By Shannon Stone

He's got the whole world (wide web) in his phone

He's got the whole world (wide web) in his phone

Samsung says it's now planning to put an end to that with a whole terabyte of storage space in its next smartphone generation.

Recently, Samsung has made an announcement that soon they will start offering 1TB eUFS (embedded Universal Flash Storage) chips in the upcoming smartphones. It will give the company's mobile devices PC-like storage without the need for large-capacity micoSD cards.

This is far better than the 64GB eUFS popularly used in many current high-end smartphones which can only afford to store 13 ten minute videos at 4K resolution. To put this into perspective, a flagship with 64 GB of storage of today can only hold 13 videos of this size.

Samsung's Galaxy Note 9 had 512GB of built-in storage when it was released past year. The chip promises speeds of up to 1,000 MB/s which is nearly twice the sequential read speed of a conventional 2.5-inch SATA SSD. The company says it has achieved such a feat by combining 16 stacked layers of its most advanced 512-gigabit V-NAND flash memory and a newly developed proprietary controller. With such speed, Samsung claims that you can offload 5GB worth of full HD videos to an NVMe SSD as quick as 5 seconds.

Although Samsung makes no reference itself as to whether this technology will be included in the next Galaxy S10 series, tech reporters and bloggers are treating it as a given.

In addition to being more capacious than the previous generation, the new 1TB eUFS is also faster-it is rated to deliver up to 1,000MB/s of sequential read performance and up to 260MB/s of sequential write performance, compared to 860MB/s and 255MB/s, respectively, on its previous generation 512GB eUFS.

Samsung's executive VP of memory sales and marketing Cheol Choi expects the new chip will be essential in bringing a more "notebook-like user experience" to mobile devices. There's also 58,000 IOPS in random read speeds while 50,000 IOPS for 50,000 random writes that is up from 42K and 40K IOPS, respectively, from the 512GB eUFS 2.1 chips.

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